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DISCRETE SEMICONDUCTORS DATA SHEET , halfpage M3D121 BA682; BA683 Band-switching diodes Product specification Supersedes data of April 1992 1996 Mar 13 Philips Semiconductors Product specification Band-switching diodes FEATURES * Continuous reverse voltage: max. 35 V * Continuous forward current: max. 100 mA * Low diode capacitance: max. 1.5 pF * Low diode forward resistance: max. 0.7 to 1.2 . MAM061 BA682; BA683 DESCRIPTION Planar high performance band-switching diodes in a glass SOD80 SMD package. handbook, 4 columns k a APPLICATION * Band-switching in VHF television tuners. Fig.1 Simplified outline (SOD80) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF Tstg Tj continuous reverse voltage continuous forward current storage temperature junction temperature PARAMETER MIN. - - -65 - MAX. 35 100 +150 150 V mA C C UNIT ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current see Fig.3 VR = 20V VR = 20 V; Tj = 75 C Cd Cd diode capacitance diode capacitance BA682 BA683 rD diode forward resistance BA682 BA683 rD diode forward resistance BA682 BA683 IF = 10 mA; f = 200 MHz; see Fig.5 0.5 0.9 IF = 3 mA; f = 200 MHz; see Fig.5 0.7 1.2 f = 1 MHz; VR = 1 V; see Fig.4 f = 1 MHz; VR = 3 V; see Fig.4 1.25 1.20 pF pF 50 1 1.5 nA A pF CONDITIONS IF = 100 mA; see Fig.2 MAX. 1.0 V UNIT 1996 Mar 13 2 Philips Semiconductors Product specification Band-switching diodes THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a FR4 printed-circuit board. GRAPHICAL DATA PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS BA682; BA683 VALUE 300 600 UNIT K/W K/W handbook, halfpage (1) (2) (3) 100 MBG308 10 5 handbook, halfpage IR (nA) 10 4 MBG307 IF (mA) 10 3 50 10 2 10 0 0 0.5 1 V F (V) 1.5 1 0 50 100 Tj ( o C) 150 (1) Tj = 75 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. VR = 20 V. Solid line: maximum values. Dotted line: typical values. Fig.2 Forward current as a function of forward voltage. Fig.3 Reverse current as a function of junction temperature. 1996 Mar 13 3 Philips Semiconductors Product specification Band-switching diodes BA682; BA683 handbook, halfpage 1.5 MBG309 handbook, halfpage 2 MBG310 Cd (pF) 1 BA682 BA683 rD () 1 0.5 BA683 BA682 0 10-1 102 0 1 10 IF (mA) 10 2 1 10 VR (V) f = 1 MHz; Tj = 25 C. f = 200 MHz; Tj = 25 C. Fig.4 Diode capacitance as a function of reverse voltage; typical values. Fig.5 Diode forward resistance as a function of forward current; typical values. 1996 Mar 13 4 |
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